Product
Home >
Products and Markets
> IC Substrate
SI13U
Characteristic
Tg≥230℃ (DMA)，Td>400℃ (5% loss, TGA)
High Flexural Modulus/Low X, Y / Z-axis CTE
Good punching & Drilling ability
Halogen-free compatible with lead-free processing. RoHS/WEEE compliant.
Application Area
Memory Card, SSD,DRAM
Fingerprint, RFModule, AP
BOC, COB, WBBGA
- Product Performance
- Product Certificate
- Data Download
| Items | Condition | Unit | SI13U |
|---|---|---|---|
| Tg | DMA | ℃ | 245 |
| Td | 5% wt. loss |
℃ |
＞400 |
| CTE (X/Y-axis) | Before Tg |
ppm/℃ |
13 |
|
CTE (Z-axis) |
α1/α2 |
ppm/℃ |
30/140 |
| Dielectric Constant * (1GHz) | @1GHz | - | 4.8 |
|
Dissipation Factor * (1GHz) |
@1GHz | - | 0.013 |
| Peel Strength * | 1/3 OZ, LP Cu |
N/mm |
0.90 |
| Solder Dipping | @288℃ | min | >30 |
| Young's modulus | 50℃ | GPa | 22 |
|
Young's modulus |
200℃ |
GPa |
13 |
| Flexural Modulus* |
50℃ |
GPa |
28 |
|
Flexural Modulus* |
200℃ |
GPa |
15 |
|
Water Absorption* |
A | % | 0.14 |
| Water Absorption* | 85℃/85%RH, 168Hr |
% |
0.35 |
|
Flammability |
UL-94 |
Rating |
V-0 |
| Thermal Conductivity | - | W/(m.K) | 0.58 |
| Color | - | - | Black |
Remarks:
Specimen thickness: 0.10mm, besides the items with * is for0.8mm specimen thickness. Test method is according to IPC-TM-650.
All the typical value listed above is foryour reference only, please turn to Shengyi Technology Co., Ltd. for detailedinformation, and all rights from this data sheet are reserved by ShengyiTechnology Co., Ltd.